Silicon carbide degreasing and sintering integrated furnace
Product Brief
Silicon carbide debinding sintering furnace is mainly used for the production of various sizes of silicon carbide powder, silicon carbide sealing ceramic sintering, pressureless silicon carbide sintering, titanium carbide powder, vanadium carbide powder and other metal powder and composite metal powder in cemented carbide and powder metallurgy industry. When the temperature is heated to 2350 ℃, it can meet the requirements of various sizes of silicon carbide powder, silicon carbide seal ceramic sintering, pressureless silicon carbide sintering, titanium carbide, vanadium carbide, and other metal powder and composite metal powder, advanced automatic control and human-computer interaction system, precise control of temperature, pressure, flow and other variables, and obvious improvement of carbon quality. Compared with the traditional carbonization furnace, it has reverse It should have the advantages of complete, uniform particle size, high combined carbon content, low free carbon content, high output, good working conditions and long service life; the latest dewaxing system, with a collection rate of 98%, ensures the full recovery of molding agent, greatly reduces the pollution of vacuum pump oil, and effectively prolongs the maintenance cycle of vacuum pump.
Product parameters
Loading space (d * h) |
φ400*1200 |
φ500*1800 |
Maximum operating temperature |
2350℃ |
Extreme vacuum |
1Pa |
Vacuum leakage rate |
≤5×10-3mbarl/s |
Vacuum pump unit |
Vane pump + roots pump |
Wax removal rate |
≥98% |
Pumping rate |
≤20min |
Heating rate (full load, < 1000 ℃) |
≤10℃/min |
Heating rate (full load, ≥ 1000 ℃) |
≤6℃/min |
Temperature uniformity in low temperature section |
≤±5℃ |
Temperature uniformity in high temperature section |
≤±4℃ |
Temperature measurement mode |
Wre5-26 dual core thermocouple + infrared thermometer |
Heating zone number |
Zone 3 / 4 |
Process gas type |
Ar、N2 |
Power Supply |
Three phase five wire AC380V ± 10% / 50Hz |
The above parameters can be adjusted according to the process requirements, not as the basis for acceptance, and the specific technical scheme and agreement shall prevail. |
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